A Gentle Vacuum Heating Method for Modulating Electronic Transport in Wafer-Scale Tungsten Nitride

Yuan-Chih Hung¹, Sheng-Zong Chen², Wei-Cheng Lin^3,4, Yong-Cheng Lai², Hao-Ting Chin⁵, Meng-Ting Wu¹, Jia-Ren Wu¹, Ding-Rui Chen¹, Sheng-Kuei Chiu⁶, Gil-Ho Kim⁷, Nobuyuki Aoki⁸, Ya-Ping Hsieh⁵, Chi-Te Liang², Chiashain Chuang^1,9*

¹Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan, Taiwan
²Department of Physics, National Taiwan University, Taipei, Taiwan
³Taiwan International Graduate Program, Academia Sinica, Taipei, Taiwan
⁴Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
⁵Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
⁶Department of Materials Science, National University of Tainan, Tainan, Taiwan
⁷Department of Electrical and Computer Engineering, Sungkyunkwan, Suwon, Korea
⁸Department of Materials Science, Chiba University, Chiba, Japan
⁹Center for Semiconductor Materials and Advanced Optoelectronics Research, Chung Yuan Christian University, Taoyuan, Taiwan

* Presenter:Chiashain Chuang, email:chiashain@cycu.edu.tw

In this talk, I would present an interesting vacuum gentle heating method to study the electronic transport properties of W5N6. Interestingly, we observed stable nearest-neighbor hopping and Efros-Shklovskii variable range hopping transport behaviors. The observed consistency with previous results in paramagnetic W5N6, along with W5N6's exceptional stability against atmospheric chemical doping, resilience, ultra-thin profile, and potential for large-scale manufacturing, paves the way for its application in future industrial magnetic sensing devices.

Keywords: Efros-Shklovskii variable range hopping, Nearest-neighbor hopping, Tungsten Nitride