Investigating optical and structural properties of Eu-doped ZnO epitaxial thin films via PL and synchrotron radiation

Wei-Lun Wei^1,5*, Chun-Yen Lin^1,5, Tzu-Chi Huang^3,5, Yu-Hao Wu^2,5, Chien-Yu Lee⁵, Gung-Chian Yin⁵, Mau-Tsu Tang⁵, Wu-Ching Chou¹, Fang-Yuh Lo⁴, Bi-Hsuan Lin⁵

¹Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
²Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
³Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
⁴Physics, National Taiwan Normal Univeristy, Taipei, Taiwan
⁵National Synchrotron Radiation Research Center, Hsinchu, Taiwan

* Presenter:Wei-Lun Wei, email:weilunalan3007@gmail.com

Pulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed the epitaxy of the film samples. Reciprocal space mapping was performed on ZnO(101 ̅1) to visualize the effect of Eu incorporation. X-ray fluorescence mapping confirmed the homogeneous distribution of Zn and Eu, and x-ray absorption near-edge structure spectra directly confirmed the trivalent state of Eu ions. The optical properties were assessed using temperature-dependent photoluminescence (PL). Various defects were identified. With increasing Eu dopant concentration, PL emissions from defects and the Eu 4f-intraband transitions gradually became the predominant features in the PL spectra at low temperatures. Furthermore, PL analysis suggested that Eu ions substituted Zn, occupying sites with lower C_3v symmetry due to the distortion caused by Eu incorporation.

Keywords: Eu, 4f-intra transistions, XANES, ϕ-scans, site-symmetry