Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor

Ting Yong Lim^1*, Hao Liu², Tay-Rong Chang¹, Shijia Tian², Du Xiang², Tao Liu², Pan He², Jian Shen², Jinfeng Zhai²

¹Department of Physics, National Cheng Kung University, Tainan, Taiwan
²State Key Laboratory of Surface Physics and Institute for Nanoelectronic devices and Quantum computing, Fudan University, Shanghai, China

* Presenter:Ting Yong Lim, email:tingyong10@gmail.com

Conventional diode-based rectifiers suffer from limited applicability in low-power electronics and high-frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non-centrosymmetric quantum materials can enable diode-free rectification with advantages such as large active area, low power threshold, and high cutoff frequency. Here, a giant NHE is reported in a chiral semiconductor hosting Weyl nodes, achieving a voltage responsivity of up to 1.4×107 V W−1 at low temperature and 1.7×106 V W−1 at room temperature. This represents orders of magnitude improvement over existing NHE rectifiers and commercial Schottky diodes. This ultrahigh rectification is attributed to the significant contributions of Weyl nodes at the conduction band edge. Moreover, the device exhibits remarkable tunability through electrostatic gate voltages. The findings establish Weyl semiconductors as a promising platform for developing highly sensitive NHE rectifiers for low-power and high-frequency applications.

Keywords: Nonlinear Hall effect, Weyl semimetal, Berry curvature dipole