Supercondcutivity in Ultrathin PEALD-growm TiN films

Muhammad Sofyan Habibi^1*, YanHo, Lu¹, Elica Anne Heredia¹, Feng, Yue-Ting¹, Sheng-Shiuan Yeh¹

¹International College Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

* Presenter:Muhammad Sofyan Habibi, email:sofyanhabibi94@gmail.com

Ultrathin superconducting films with large kinetic inductance (KI) are crucial for quantum detectors, amplifiers, and qubit circuits [1–7]. Titanium nitride (TiN) is particularly attractive due to its high surface inductance, low microwave losses, and strong chemical stability [8]. Here, we report superconducting TiN films grown by plasma-enhanced atomic layer deposition (PEALD) on undoped Si (111) and heavily p-type doped Si substrate with 300-nm-thick SiO₂. The normal-state sheet resistance (R_s ) and superconducting transition temperature (T_c ) exhibit a strong thickness dependence, revealing enhanced disorder in thinner films. For a 4 nm film, R_s=2,163 Ω/☐ and T_c=1.76 K, corresponding to a sheet inductance of L_s=1.7 nH. These results demonstrate that PEALD-grown TiN films provide precise tunability and high quality, making them promising for high-impedance superconducting quantum devices.

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Keywords: Titanium Nitride, Ultrathin films, Superconductivity, Quantum Device, Sheet Kinetic Inductance