Fabrication and measurement of a Ge/SiGe quantum dot device

Tien-Ho Chang^1*, G.Y. Yang¹, J.C. Zeng¹, Y.Q. Lai¹, C.H. Wang¹, D.J. Zhuo², G.L. Luo², T.K. Hsiao¹

¹department of physics, National Tsing Hua University (NTHU), Hsinchu, Taiwan
²Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

* Presenter:Tien-Ho Chang, email:hertz.tera@gmail.com

Due to several advantages such as high mobility, strong spin orbit coupling, and low effective mass, Germanium hole-spin qubits have become a promising platform for quantum computing. Demonstration of long coherence times and the potential for scale up thanks to its compatibility with industrial nanofabrication techniques also contributes to its potential.
In this presentation I will demonstrate our measurementsresults of a germanium double quantum dot device, measured in a 10mK environment. Our device is fabricated in house on a locally grown germanium quantum well heterostructure with a single aluminum fine gate layer covered by a global accumulation gate that allows for easier alignment in fabrication. The device is loaded on a custom-made sample PCB and measured in an Oxford Proteox fridge equipped with a RF reflectometry readout system.

Keywords: quanum dot, spin qubit, germanium