Direct Diagnosis of Contact Interface and Grain Boundary of MoS2/Au by conductive AFM

Yu-Ting Chen^1*, Yi-Ting Chen², Meng-Lin Tsai², Chi Chen¹

¹Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan
²Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan

* Presenter:Yu-Ting Chen, email:re09022318@gmail.com

This study presents a MoS₂, exhibiting diverse stacking configurations, are synthesized on silicon through a chemical vapor deposition (CVD) process. Distinct differences in the interfaces emerge, attributable to the temperature-dependent deposition conditions. Utilizing a custom-built conductive atomic force microscope (CAFM), the MoS2/Au contact interfaces are directly imaged. In particular, the MoS2/Au interface exhibit gold terraces with certain directions in each grain. Dips in lateral force microscopy (LFM) image become indicative of the grain boundary. This work provides better insights into contact and the grain boundary (GB) as a diagnosis tool and promotes optimization of two-dimensional material interfaces.

Keywords: conductive AFM, 2D materials, transition metal dichalcogenide, MoS2, LFM