Inorganic/Organic Hybrid Vertical Transistors: Device Physics and Optoelectronic Integration

Jui-Fen Chang^1*, Zheng-Feng Zhuang¹, Guang-Ru Huang¹, Jia-Min Yu¹

¹Department of Optics and Photonics, National Central University, Taiwan

* Presenter:Jui-Fen Chang, email:jfchang31@g.ncu.edu.tw

This presentation explores the development, charge transport physics, and optoelectronic applications of inorganic/organic hybrid vertical transistors. Evolved from Schottky-barrier organic transistor concepts, this hybrid architecture combines the high carrier mobility of inorganic semiconductors with the tunable optical and electronic properties of organic materials. The resulting devices operate at low voltages, deliver high current densities and large on/off ratios, and feature scalable geometries with high aperture ratios—collectively achieving significant advances in performance, energy efficiency, and integration compared with conventional organic transistors.

A theoretical framework is also established to elucidate the underlying mechanisms of charge transport and channel formation. Through systematic analyses of interfacial barriers, carrier mobilities, and source designs, the key parameters governing current modulation and spatial distribution are identified, providing quantitative guidelines for device optimization.

Furthermore, this hybrid transistor platform enables multifunctional implementations, including light-emitting and photosensitive transistors, within a unified device architecture. Such integration offers a promising pathway toward next-generation monolithic optoelectronic systems and display technologies with enhanced performance, compactness, and design flexibility.

Keywords: vertical transistor, charge transport , optoelectronic applications