Deterministic switching of antipolar variants in antiferroelectric thin films

Shih-Chao Chang^1*, Yi-De Liou¹, Hung-Ren Wang¹, Jan-Chi Yang¹

¹Physics, National Cheng Kung University, Tainan, Taiwan

* Presenter:Shih-Chao Chang, email:tony0970808978@gmail.com

Antiferroelectric materials, distinguished by their antiparallel dipole arrangements, are promising candidates for high-energy-density capacitors and ultra-low-power electronics. However, the challenge of controlling their degenerate antipolar domain states has limited practical applications. In this study, we present a method for the selective and reversible manipulation of antiferroelectric domain variants in freestanding PbZrO₃ membranes using localized electron beam irradiation. By adjusting the beam-induced internal electric fields, we achieve precise switching between in-plane and out-of-plane antipolar configurations. Moreover, we demonstrate that different electron beam can deterministically direct the system toward specific domain states. Complementary phase-field simulations reveal the energy landscape and dynamic evolution of domains under these conditions, clarifying the physical mechanisms of these phenomena. Our findings offer a versatile strategy for deterministic control of antipolar orders, opening new avenues for domain engineered, reconfigurable nanoelectronic and memory devices based on antiferroelectric perovskites.

Keywords: antiferroelectric, PbZrO₃, electron beam irradiation, nonvolatile, reversible control